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BAS19L, BAS20L, BAS21L, BAS21DW5
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THERMAL CHARACTERISTICS (SOT?23)
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board
(Note 2)
TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance
Junction?to?Ambient (SOT?23)
RJA
556
°C/W
Total Device Dissipation Alumina Substrate
(Note 3)
TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance Junction?to?Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
?55 to +150
°C
THERMAL CHARACTERISTICS (SC?88A)
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 4)
PD
385
mW
Thermal Resistance ?
Junction?to?Ambient
Derate Above 25°C
RJA
328
3.0
°C/W
mW/°C
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ, Tstg
?55 to +150
°C
2. FR?5 = 1.0
0.75
0.062 in.
3. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
4. Mounted on FR?5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
(VR
= 100 Vdc) BAS19
(VR
= 150 Vdc) BAS20
(VR
= 200 Vdc) BAS21
(VR
= 100 Vdc, T
J
= 150
°C) BAS19
(VR
= 150 Vdc, T
J
= 150
°C) BAS20
(VR
= 200 Vdc, T
J
= 150
°C) BAS21
IR
?
?
?
?
?
?
0.1
0.1
0.1
100
100
100
Adc
Reverse Breakdown Voltage
(IBR
= 100
Adc) BAS19
(IBR
= 100
Adc) BAS20
(IBR
= 100
Adc) BAS21
V(BR)
120
200
250
?
?
?
Vdc
Forward Voltage
(IF
= 100 mAdc)
(IF
= 200 mAdc)
VF
?
?
1.0
1.25
Vdc
Diode Capacitance (VR
= 0, f = 1.0 MHz)
CD
?
5.0
pF
Reverse Recovery Time (IF
= I
R
= 30 mAdc, I
R(REC)
= 3.0 mAdc, R
L
= 100)
trr
?
50
ns
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